Semiconductor device manufacturing: process – Introduction of conductivity modifying dopant into... – Ion implantation of dopant into semiconductor region
Reexamination Certificate
2006-01-24
2006-01-24
Nhu, David (Department: 2818)
Semiconductor device manufacturing: process
Introduction of conductivity modifying dopant into...
Ion implantation of dopant into semiconductor region
C438S262000, C438S266000
Reexamination Certificate
active
06989320
ABSTRACT:
The present invention pertains to implementing a dual poly process in forming a transistor based memory device. The process allows buried bitlines to be formed with less energy and to shallower depths than conventional bitlines to save resources and space, and to improve Vt roll-off. Oxide materials are also formed over the buried bitlines to improve (e.g., increase) a breakdown voltage between the bitlines and wordlines, thus allowing for greater discrimination between programming and erasing charges and more reliable resulting data storage. The process also facilitates a reduction in buried bitline width and thus allows bitlines to be formed closer together. As a result, more devices can be “packed” within the same or a smaller area.
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Solid State Technology's WaferNEWS, The Semiconductor Equipment and Materials Weekly Briefing, Mar. 17, 2003, V10n22, 11 pgs.
Haddad Sameer
Qian Weidong
Ramsbey Mark
Yang Jean Yee-Mei
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