Static information storage and retrieval – Read/write circuit – Precharge
Reexamination Certificate
2007-08-21
2007-08-21
Phung, Anh (Department: 2824)
Static information storage and retrieval
Read/write circuit
Precharge
C365S205000
Reexamination Certificate
active
11311273
ABSTRACT:
There is provided a bitline driving circuit and its driving method for minimizing a leakage current flowing between a wordline and a bitline in a power down mode and a self-refresh mode. The bitline driving circuit for reducing a leakage current in a semiconductor memory device includes a main driving block for precharging a bitline pair connected to a sense amplifier with a same voltage level, controlled by a main bitline equalizing signal; a sub driving block for equalizing a voltage level of a bitline pair connected to a cell array voltage in a precharge mode, controlled by a sub bitline equalizing signal; and a bitline isolation block for electrically disconnecting the main driving block and the sub driving block, controlled by a bitline isolation signal.
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Hynix / Semiconductor Inc.
Phung Anh
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