Bit line sense amplifier of semiconductor memory device...

Details Bit line sense amplifier of semiconductor memory device... Bit line sense amplifier of semiconductor memory device...

2007-08-06

2009-12-29

Pham, Ly D (Department: 2827)

Static information storage and retrieval

Read/write circuit

Differential sensing

C365S063000, C365S189090, C365S189110, C365S191000, C365S203000, C365S205000

Reexamination Certificate

active

07639556

ABSTRACT:
In an embodiment, a bit line sense amplifier of a semiconductor memory device with an open bit line structure includes sense amplifier blocks, first voltage drivers, and a second voltage driver. The sense amplifier blocks include a first sense amplifier and a second sense amplifier, each sensing and amplifying a signal difference between a bit line and a complementary bit line. The first voltage drivers apply a power source voltage to the first sense amplifier, and the second voltage driver applies a ground voltage to the second sense amplifier. The first voltage drivers are disposed for every two or more sense amplifier blocks in a bit line sense amplifier region in which the sense amplifier blocks are arranged, and the second voltage driver is disposed in a conjunction region in which a control circuit is located to control the sense amplifier blocks. Both capacitive noise and device size are minimized.

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English language abstract of Japanese Publication No. 2000-208739.
English language abstract of Japanese Publication No. 2001-244438.
English language abstract of Japanese Publication No. 2003-234418.

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