Static information storage and retrieval – Read/write circuit – Flip-flop used for sensing
Patent
1995-06-20
1996-10-15
Nelms, David C.
Static information storage and retrieval
Read/write circuit
Flip-flop used for sensing
365207, 365149, 365203, G11C 700
Patent
active
055661165
ABSTRACT:
A bit line sense amplifier in a semiconductor memory device having a sense amplifier for sensing and amplifying a logic slate of data stored in a selected memory cell in response to a row address and for outputting sense-amplified data to a bit line pair, and transmission means for transmitting output data of the bit line pair to the corresponding input/output line pair thereto. The bit line sense amplifier includes a secondary power supply voltage generating circuit for supplying a secondary power supply voltage and a secondary ground potential in response to a block selection signal for selecting a memory block including the selected memory cell, and a secondary sense amplifier being supplied with the secondary power supply voltage and secondary ground potential, and for converting data indicative of a potential difference of the bit line pair and input/output line pair to a level of the secondary power supply voltage and ground potential in response to the column selection signal.
REFERENCES:
patent: 4980863 (1990-12-01), Ogihara
patent: 5412605 (1995-05-01), Ooishi
patent: 5444662 (1995-08-01), Tanaka et al.
Hoang Huan
Nelms David C.
Samsung Electronics Co,. Ltd.
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