Bit line of a semiconductor device and method for...

Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate

Reexamination Certificate

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Details

C438S238000, C438S240000, C438S254000, C438S255000, C438S303000, C257SE21269, C257SE21275

Reexamination Certificate

active

07846795

ABSTRACT:
A bit line of a semiconductor device includes a first interlayer dielectric film disposed on a semiconductor substrate, a plurality of bit line stacks disposed on the first interlayer dielectric film, a plurality of bit line spacers disposed on side walls of the bit line stacks, and a buffer film disposed on the bit line spacers, the first interlayer dielectric film and the bit line stacks; and a method for fabricating the same.

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patent: 6261891 (2001-07-01), Cheng et al.
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patent: 6380042 (2002-04-01), Huang
patent: 6630739 (2003-10-01), Sonego et al.
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patent: 2001/0009810 (2001-07-01), Li et al.
patent: 2002/0047151 (2002-04-01), Kim et al.
patent: 2002/0105088 (2002-08-01), Yang et al.
patent: 2003/0203113 (2003-10-01), Cho et al.
patent: 2005/0196114 (2005-09-01), Xu et al.
patent: 10-2000-0074692 (2000-12-01), None
patent: 10-2004-0028244 (2004-04-01), None

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