Static information storage and retrieval – Read/write circuit – Testing
Reexamination Certificate
2005-08-23
2005-08-23
Phung, Anh (Department: 2824)
Static information storage and retrieval
Read/write circuit
Testing
C365S200000
Reexamination Certificate
active
06934205
ABSTRACT:
A processor assisted memory BIST to identify detective memory addresses. The processor generates the address to be tested and the BIST generates the test data used to test the memory. Data is written to an read from memory. The read data is compared with the test data. If a mismatch occurs, the BIST generates an interrupt to identify the processor. Since the processor generated the address, the defective memory address is identified. The defective memory address can subsequently be replaced with redundant memory cells.
REFERENCES:
patent: 4193125 (1980-03-01), Moriya
patent: 4639892 (1987-01-01), Mizugaki et al.
patent: 5293386 (1994-03-01), Muhmenthaler et al.
patent: 5394354 (1995-02-01), Watabe et al.
patent: 5414653 (1995-05-01), Onishi et al.
patent: 5535164 (1996-07-01), Adams et al.
patent: 5541872 (1996-07-01), Lowrey et al.
patent: 5617531 (1997-04-01), Crouch et al.
patent: 5764588 (1998-06-01), Nogami et al.
patent: 5805789 (1998-09-01), Huott et al.
patent: 5856940 (1999-01-01), Rao
patent: 5963468 (1999-10-01), Rao
patent: 6067265 (2000-05-01), Mukunoki et al.
patent: 6072737 (2000-06-01), Morgan et al.
patent: 6085334 (2000-07-01), Giles et al.
patent: 6091649 (2000-07-01), Choi
patent: 6108252 (2000-08-01), Park
patent: 6147895 (2000-11-01), Kamp
patent: 6421283 (2002-07-01), Walley et al.
patent: 6421797 (2002-07-01), Kim
patent: 6427283 (2002-08-01), Dietrich et al.
patent: 6523135 (2003-02-01), Nakamura
patent: 2002/0194558 (2002-12-01), Wang et al.
Daisaburo Takashima, IWAO Kunishima: “High-Density Chain Ferroelectric Random Access Memory (Chain FRAM)”: IEEE Journal of Solid-State Circuits, vol. 33, No. 5; May 1998; pp. 787-792.
Najafi Ali
Pandey Pramod
Horizon IP Pte Ltd
Infineon Technologies Aktiengesellschaft
Phung Anh
LandOfFree
Bist for parallel testing of on chip memory does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Bist for parallel testing of on chip memory, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Bist for parallel testing of on chip memory will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3477915