Bismuth titanium silicon oxide, bismuth titanium silicon...

Details Bismuth titanium silicon oxide, bismuth titanium silicon... Bismuth titanium silicon oxide, bismuth titanium silicon...

2008-05-20

2008-05-20

Smith, Zandra V. (Department: 2813)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S785000, C438S786000, C501S134000

Reexamination Certificate

active

11136456

ABSTRACT:
A bismuth titanium silicon oxide having a pyrochlore phase, a thin film formed of the bismuth titanium silicon oxide, a method for forming the bismuth-titanium-silicon oxide thin film, a capacitor and a transistor for a semiconductor device including the bismuth-titanium-silicon oxide thin film, and an electronic device employing the capacitor and/or the transistor are provided. The bismuth titanium silicon oxide has good dielectric properties and is thermally and chemically stable. The bismuth-titanium-silicon oxide thin film can be effectively used as a dielectric film of a capacitor or as a gate dielectric film of a transistor in a semiconductor device. Various electronic devices having good electrical properties can be manufactured using the capacitor and/or the transistor having the bismuth-titanium-silicon oxide film.

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