Bismuth titanium silicon oxide, bismuth titanium silicon...

Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode

Reexamination Certificate

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C257S295000, C438S003000, C428S446000, C428S689000, C428S702000, C501S134000

Reexamination Certificate

active

06919597

ABSTRACT:
A bismuth titanium silicon oxide having a pyrochlore phase, a thin film formed of the bismuth titanium silicon oxide, a method for forming the bismuth-titanium-silicon oxide thin film, a capacitor and a transistor for a semiconductor device including the bismuth-titanium-silicon oxide thin film, and an electronic device employing the capacitor and/or the transistor are provided. The bismuth titanium silicon oxide has good dielectric properties and is thermally and chemically stable. The bismuth-titanium-silicon oxide thin film can be effectively used as a dielectric film of a capacitor or as a gate dielectric film of a transistor in a semiconductor device. Various electronic devices having good electrical properties can be manufactured using the capacitor and/or the transistor having the bismuth-titanium-silicon oxide film.

REFERENCES:
patent: 6004392 (1999-12-01), Isobe et al.
patent: 6126743 (2000-10-01), Saegusa et al.
patent: 6440591 (2002-08-01), Matsunaga et al.
patent: 2003/0227803 (2003-12-01), Natori et al.
patent: 2004/0136891 (2004-07-01), Kijima et al.
patent: 2004/0211998 (2004-10-01), Araujo et al.
patent: 0 953 550 (1999-11-01), None
patent: 1 045 435 A2 (2000-10-01), None
patent: 11186523 (1999-07-01), None
XP-002254335—Derwent Abstract—“Dielectric, glass-ceramic materials—contg. calcium bismuth . . . ”.
XP-002260231—Derwent Abstract—JP 52 060989 (May 19, 1977).

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