Bipolar transistor with MOS-controlled protection for reverse-bi

Details Bipolar transistor with MOS-controlled protection for reverse-bi Bipolar transistor with MOS-controlled protection for reverse-bi

1995-11-21

1998-06-30

Wojciechowicz, Edward

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

438197, 438204, 438234, 438369, 438372, 438597, 257378, H01L 2972

Patent

active

057733384

ABSTRACT:
A bipolar transistor with MOS-controlled protection for a reverse-biased emitter-base junction is disclosed. A bipolar transistor and a MOS transistor are configured with the drain and the gate electrically coupled to the emitter, and the source and body electrically coupled to the base. A reverse-bias at the emitter-base junction, which is less than a breakdown voltage for the emitter-base junction, activates the MOS transistor which substantially reduces the resistance between the emitter and the base. Preferably, a first semiconductor region provides both the drain and the emitter, and a second semiconductor region provides both the body and the base, for reduced surface area on an integrated circuit chip.

REFERENCES:
patent: 4804634 (1989-02-01), Krishna et al.
patent: 4821089 (1989-04-01), Strauss
patent: 5027184 (1991-06-01), Soclof
patent: 5043786 (1991-08-01), Desilets et al.
patent: 5043787 (1991-08-01), Soclof
patent: 5070381 (1991-12-01), Scott et al.
S. Verdonckt-Vandebroek et al., "A Complementary High Current Gain Transistor for use in a CMOS Compatible Technology", IEEE 1990 Bipolar Circuits and Technology Meeting 4.2, 1990, pp. 82-85.
S. Verdonckt-Vandebroek et al., "High-Gain Lateral Bipolar Action in a MOSFET Structure", IEEE Transactions on Electron Devices, vol. 38, No. 11, Nov. 1991, pp. 2487-2496.
S. Verdonckt-Vandebroek et al., "High-Gain Lateral p-n-p Bipolar Action in a p-MOSFET Structure", IEEE Electron Device Letters, vol. 13, No. 6, Jun. 1992, pp. 312-313.
S. Parke et al., "A High-Performance Lateral Bipolar Transistor Fabricated on SIMOX", IEEE Electronics Device Letters, vol. 14, No. 1, 1993, pp. 33-35.
R. Zambrano, "Improved Structures for Power MOSFETs With Full On-Chip Protection", Fifth European Conference on Power Electronics and Applications on behalf of the European Power Electronics Association, No. 377, vol. 2, Sep. 13-16, 1993, pp. 1-4.
M. Shibib et al., "A Cost-Effective Smart Power BiCMOS Technology", Proceedings of The 7th International Symposium on Power Semiconductor Devices & ICs, Yokohama, Japan, May 23-25, 1995, pp. 48-53.
J. Olsson et al., "High Current Gain Hybrid Lateral Bipolar Operation of DMOS Transistors", IEEE Transactions on Electron Devices, vol. 42, No. 9, Sep. 1995, pp. 1628-1634.

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