Semiconductor device manufacturing: process – Forming bipolar transistor by formation or alteration of... – Having heterojunction
Reexamination Certificate
2007-03-06
2007-03-06
Whitehead, Jr., Carl (Department: 2813)
Semiconductor device manufacturing: process
Forming bipolar transistor by formation or alteration of...
Having heterojunction
C257S103000, C257S197000, C257S198000, C600S553000
Reexamination Certificate
active
10824697
ABSTRACT:
A semiconductor material which has a high carbon dopant concentration and is composed of gallium, indium, arsenic and nitrogen is disclosed. The material is useful in forming the base layer of gallium arsenide based heterojunction bipolar transistors because it can be lattice matched to gallium arsenide by controlling the concentration of indium and nitrogen. The disclosed semiconductor materials have a low sheet resistivity because of the high carbon dopant concentration obtained.
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Deluca Paul M.
Pan Noren
Welser Roger E.
Hamilton Brook Smith & Reynolds P.C.
Jr. Carl Whitehead
Kopin Corporation
Rodgers Colleen E.
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