Bipolar transistor with L-shaped base-emitter spacer

Details Bipolar transistor with L-shaped base-emitter spacer Bipolar transistor with L-shaped base-emitter spacer

1998-11-19

2000-10-10

Nguyen, Tuan H.

Semiconductor device manufacturing: process

Forming bipolar transistor by formation or alteration of...

Self-aligned

438368, 438370, 438738, H01L 21301

Patent

active

061301361

ABSTRACT:
A method for fabricating a spacer in a transistor. The method comprises the steps of forming a stepped feature 384, 386 at a surface of a semiconductor body 340, the stepped feature having a lateral face substantially parallel to the surface and an angled face substantially perpendicular to the surface. An insulating layer 410 is formed over the lateral and angled faces of the stepped feature 384, 386 and a sacrificial layer 404 is formed over the insulating layer and over the lateral and angled faces of the stepped feature. The portion of the sacrificial layer over the lateral face is removed to expose portions of the insulating layer and to leave a portion of the sacrificial layer to cover the angled face of the stepped feature. Finally, the exposed portions of the insulating layer are removed to leave an L-shaped insulator layer, such as may be useful to insulate the base electrode from the emitter electrode in a bipolar transistor.

REFERENCES:
patent: 4988632 (1991-01-01), Pfiester
patent: 5213989 (1993-05-01), Fitch et al.
patent: 5804486 (1998-09-01), Zambrano et al.
patent: 5940711 (1999-08-01), Zambrano

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