Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Reexamination Certificate
2006-09-06
2010-11-02
Trinh, Michael (Department: 2822)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
C438S312000, C438S316000, C438S341000, C257SE21372
Reexamination Certificate
active
07824978
ABSTRACT:
A bipolar transistor with very high dynamic performance, usable in an integrated circuit. The bipolar transistor has a single-crystal silicon emitter region with a thickness smaller than 50 nm. The base of the bipolar transistor is made of an SiGe alloy.
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Chantre Alain
Chevalier Pascal
Martinet Bertrand
Marty Michel
Jorgenson Lisa K.
Morris James H.
STMicroelectronics S.A.
Trinh Michael
Wolf Greenfield & Sacks P.C.
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