Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having junction gate
Reexamination Certificate
2006-08-28
2008-10-28
Le, Thao P. (Department: 2818)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having junction gate
C257SE27053
Reexamination Certificate
active
07442595
ABSTRACT:
A structure and method where C is incorporated into the collector region of a heterojunction bipolar device by a method which does not include C ion implantation are provided. In the present invention, C is incorporated into the collector by epitaxy in a perimeter trench etched into the collector region to better control the carbon profile and location. The trench is formed by etching the collector region using the trench isolation regions and a patterned layer over the center part of the collector as masks. Then, Si:C is grown using selective epitaxy inside the trench to form a Si:C region with sharp and well-defined edges. The depth, width and C content can be optimized to control and tailor the collector implant diffusion and to reduce the perimeter component of parasitic CCB.
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Osten, et al., “Carbon Doped SiGe Heterojunction Bipolar Transistors for High Frequency Applications”, Institute for Semiconductor Physics, pp. 109-116, IEE 1999.
Freeman Gregory G.
Khater Marwan H.
Krishnasamy Rajendran
Schonenberg Kathryn T.
Stricker Andreas D.
International Business Machines - Corporation
Kotulak, Esq. Richard M.
Le Thao P.
Scully , Scott, Murphy & Presser, P.C.
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