Bipolar transistor formed by a high energy ion implantation meth

Details Bipolar transistor formed by a high energy ion implantation meth Bipolar transistor formed by a high energy ion implantation meth

1997-05-05

1999-01-05

Niebling, John

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

438208, 438234, 438370, 438373, 438414, 438526, 257370, 148DIG9, H01L 218238

Patent

active

058562184

ABSTRACT:
In an NPN bipolar transistor having a special structure in which each impurity region is formed by ion implantation, a width of a base region is significantly reduced, and therefore, current amplification factor hfe is increased, resulting in improvement in performance thereof. Furthermore, a Bi-CMOS transistor can be manufactured using a CMOS process. The use of the bipolar transistor having a special structure for a driving circuit allows implementation of a driving circuit having large driving force with slight increase in cost.

REFERENCES:
patent: 4914048 (1990-04-01), Scovell et al.
patent: 4927776 (1990-05-01), Soejima
patent: 4965220 (1990-10-01), Iwasaki
patent: 4987089 (1991-01-01), Roberts
patent: 5015594 (1991-05-01), Chu et al.
patent: 5030860 (1991-07-01), Tran
patent: 5147818 (1992-09-01), Hikida
patent: 5192992 (1993-03-01), Kim et al.
patent: 5485034 (1996-01-01), Maeda et al.
patent: 5495120 (1996-02-01), Honda
"Analysis and Design of Analog Integrated Circuits, Second Edition" by R.R. Gray and R.G. Meyer, pp. 81-105 (Nov. 30, 1990).

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