Bipolar transistor and method for making same

Details Bipolar transistor and method for making same Bipolar transistor and method for making same

2009-10-05

2011-11-01

Picardat, Kevin M (Department: 2822)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S235000, C438S236000, C438S312000, C438S318000, C438S320000, C438S349000

Reexamination Certificate

active

08048734

ABSTRACT:
One or more embodiments of the invention relate to a method of making a heterojunction bipolar transistor, including: forming a collector layer; forming a stack of at least a second dielectric layer overlying a first dielectric layer, the stack formed over the collector layer; removing a portion of each of the dielectric layers to form an opening through the stack; and forming a base layer within the opening.

REFERENCES:
patent: 6455364 (2002-09-01), Asai et al.
patent: 6521974 (2003-02-01), Oda et al.
patent: 2005/0181569 (2005-08-01), Koshimizu et al.
patent: 2007/0045664 (2007-03-01), Miura et al.
patent: 2008/0191246 (2008-08-01), Chen et al.
patent: 1152462 (2001-11-01), None

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