Binary chlorofluorocarbon chemistry for plasma etching

Details Binary chlorofluorocarbon chemistry for plasma etching Binary chlorofluorocarbon chemistry for plasma etching

1987-11-23

1989-06-06

Lacey, David L.

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

156646, 156656, 1566591, 156664, 252 791, C23F 102, C23F 112

Patent

active

048368865

ABSTRACT:
A plasma comprised of trifluorochloromethane and an oxidant etches non-insulating materials such as tungsten at very high etch rates when the oxidant comprises at least 50% of the plasma by volume.

REFERENCES:
patent: Re30505 (1981-02-01), Jacob
patent: 3923568 (1975-12-01), Bersin
patent: 3951709 (1976-04-01), Jacob
patent: 4026742 (1977-05-01), Fujino
patent: 4180432 (1979-12-01), Clark
patent: 4267013 (1981-05-01), Iida et al.
patent: 4314875 (1982-02-01), Flamm
patent: 4353777 (1982-10-01), Jacob
patent: 4374698 (1983-02-01), Sanders et al.
patent: 4473436 (1984-09-01), Beinvogl
patent: 4475982 (1984-10-01), Lai et al.
patent: 4547261 (1985-10-01), Maa et al.
patent: 4720322 (1988-01-01), Tiffin
Coburn et al., "Plasma Etching--A Discussion of Mechanisms", J. Vac. Sci. Tech., vol. 16, No. 2, Mar. Apr. 1979, pp. 391-403.
Coburn, "Plasma-Assisted Etching", Plasma Chemistry and Plasma Processing, vol. 2, No. 1, 1982, pp. 1-41.
"Blanket CVD Tungsten Interconnect for VLSI Devices," S. Mehta et al., 1986 Proceedings 3rd International IEEE VLSI Multilevel Interconnection Conference, Santa Clara, Calif., Jun. 9-10, 1986, pp. 418-435.
"RF Sputter-Etching by Fluoro-Chloro-Hydrocarbon Gases," N. Hosokawa et al., Japan J. Appl. Phys., Suppl. 2, Pt. 1, 1974, p. 435.
"Selective Dry Etching of Tungsten for VLSI Metallization," M. E. Burba et al., Journal of the Electrochemical Society: Solid State Science and Technology, Oct. 1986, pp. 2113-2118.

Affiliated with

Also associated with

Rating

Binary chlorofluorocarbon chemistry for plasma etching does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Binary chlorofluorocarbon chemistry for plasma etching, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Binary chlorofluorocarbon chemistry for plasma etching will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-38738