Bimetallic oxide compositions for gate dielectrics

Details Bimetallic oxide compositions for gate dielectrics Bimetallic oxide compositions for gate dielectrics

2006-03-21

2006-03-21

Dang, Phuc T. (Department: 2818)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S785000, C257S761000

Reexamination Certificate

active

07015096

ABSTRACT:
In one embodiment, bimetallic oxide compositions for gate dielectrics that include two or more of the elements Ca, Sr, Ba, Hf, and Zr are described.

REFERENCES:
patent: 5124289 (1992-06-01), Martin et al.
patent: 6566147 (2003-05-01), Basceri et al.
Matti Putkonen et al., “Enhanced growth rate in atomic layer epitaxy deposition of magnesium oxide thin films”,J. Mater. Chem., 2000 vol. 10, pp. 1857-1861.
Matti Putkonen et al., “Surface-controlled growth of magnesium oxide thin films by atomic layer epitaxy”,J. Mater. Chem., 1999, vol. 9, pp. 2449-2452.
Timo Hatanpää “Properties of [Mg2(thd)4] as a Precursor for Atomic Layer Deposition of MgO Thin Films and Crystal Structures of [Mg2(thd)4] and [Mg(thd)2(EtOH)2]”,Chem. Mater., 1999, vol. 11, No. 7, pp. 1846-1852.
Mikko Ritala et al., “Atomic Layer Deposition”,Handbook of Thin Film Materials, vol. 1: Deposition and Processing of Thin Films, pp. 103-159.

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