Etching a substrate: processes – Masking of a substrate using material resistant to an etchant – Mask resist contains inorganic material
Reexamination Certificate
2006-05-30
2006-05-30
Norton, Nadine G. (Department: 1765)
Etching a substrate: processes
Masking of a substrate using material resistant to an etchant
Mask resist contains inorganic material
C438S622000, C438S623000, C438S627000, C438S628000, C438S648000, C428S336000, C428S446000, C428S457000, C428S627000, C428S660000, C428S698000
Reexamination Certificate
active
07052621
ABSTRACT:
A metal hardmask for use with a Dual Damascene process used in the manufacturing of semiconductor devices. The metal hardmask has advantageous translucent characteristics to facilitate alignment between levels while fabricating a semiconductor device and avoids the formation of metal oxide residue deposits. The metal hardmask comprises a first or primary layer of TiN (titanium nitride) and a second or capping layer of TaN (tantalum nitride).
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Clevenger Lawrence
Cowley Andy
Dalton Timothy
Hoinkis Mark
Kaldor Steffen K.
Chen Eric B.
Norton Nadine G.
Slater & Matsil L.L.P.
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