Active solid-state devices (e.g. – transistors – solid-state diode – With means to control surface effects – Channel stop layer
Reexamination Certificate
2005-07-05
2005-07-05
Smith, Matthew (Department: 2825)
Active solid-state devices (e.g., transistors, solid-state diode
With means to control surface effects
Channel stop layer
C257S753000, C438S631000
Reexamination Certificate
active
06914320
ABSTRACT:
An advanced back-end-of-line (BEOL) metallization structure is disclosed. The structure includes a bilayer diffusion barrier or cap, where the first cap layer is formed of a dielectric material preferably deposited by a high density plasma chemical vapor deposition (HDP CVD) process, and the second cap layer is formed of a dielectric material preferably deposited by a plasma-enhanced chemical vapor deposition (PE CVD) process. A method for forming the BEOL metallization structure is also disclosed. The invention is particularly useful in interconnect structure comprising low-k dielectric material for the inter-layer dielectric (ILD) and copper for the conductors.
REFERENCES:
patent: 6043152 (2000-03-01), Chang et al.
patent: 6080529 (2000-06-01), Ye et al.
patent: 6099701 (2000-08-01), Liu et al.
patent: 6107188 (2000-08-01), Liu et al.
patent: 6127238 (2000-10-01), Liao et al.
patent: 6153523 (2000-11-01), Van Ngo et al.
patent: 6162583 (2000-12-01), Yang et al.
patent: 6211061 (2001-04-01), Chen et al.
patent: 6218732 (2001-04-01), Russell et al.
patent: 6225210 (2001-05-01), Ngo et al.
patent: 6235633 (2001-05-01), Jang
patent: 6261951 (2001-07-01), Buchwalter et al.
patent: 6528432 (2003-03-01), Ngo et al.
patent: 6593237 (2003-07-01), Ngo et al.
patent: 2001/0000155 (2001-04-01), Huang et al.
patent: 2001/0002333 (2001-05-01), Huang et al.
patent: 2001/0002731 (2001-06-01), Ueda
patent: 2001/0003064 (2001-06-01), Ohto
patent: 2002/0100907 (2002-08-01), Wang
patent: 1111843 (1989-04-01), None
patent: 2001015480 (2001-01-01), None
patent: 2001053076 (2001-02-01), None
patent: WO 99/33102 (1999-07-01), None
patent: WO 00/19523 (2000-06-01), None
Soo Geun Lee et al., “Low Dielectric Constant 3MS a-SiC:H as Cu Diffusion Barrier Layer in Cu Dual Damascene Process,” Japanese Journal of Applied Physics, Part 1, vol. 40, No. 4B, pp. 2663-2668, Apr. 2001.
R.D. Goldblatt et al., “A High Performance 0.13 um Copper BEOL Technology with Low-k Dielectric,” Proceedings of the IEEE 2000 International Interconnect Technology Conference, pp. 261-263, Jun. 5-7, 2000.
Chen Tze-Chiang
Engel Brett H.
Fitzsimmons John A.
Kaltalioglu Erdem
Kane Terence
Infineon - Technologies AG
Lee Calvin
Pepper Margaret A.
Smith Matthew
LandOfFree
Bilayer HDP CVD/PE CVD cap in advanced BEOL interconnect... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Bilayer HDP CVD/PE CVD cap in advanced BEOL interconnect..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Bilayer HDP CVD/PE CVD cap in advanced BEOL interconnect... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3412659