Bilayer HDP CVD/PE CVD cap in advance BEOL interconnect...

Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material

Reexamination Certificate

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

C438S652000, C257S652000

Reexamination Certificate

active

06887783

ABSTRACT:
An advanced back-end-of-line (BEOL) metallization structure is disclosed. The structure includes a bilayer diffusion barrier or cap, where the first cap layer is formed of a dielectric material preferably deposited by a high density plasma chemical vapor deposition (HDP CVD) process, and the second cap layer is formed of a dielectric material preferably deposited by a plasma-enhanced chemical vapor deposition (PE CVD) process. A method for forming the BEOL metallization structure is also disclosed. The invention is particularly useful in interconnect structures comprising low-k dielectric material for the inter-layer dielectric (ILD) and copper for the conductors.

REFERENCES:
patent: 6043152 (2000-03-01), Chang et al.
patent: 6080529 (2000-06-01), Ye et al.
patent: 6099701 (2000-08-01), Liu et al.
patent: 6107188 (2000-08-01), Liu et al.
patent: 6127238 (2000-10-01), Liao et al.
patent: 6153523 (2000-11-01), Van Ngo et al.
patent: 6162583 (2000-12-01), Yang et al.
patent: 6184073 (2001-02-01), Lage et al.
patent: 6211061 (2001-04-01), Chen et al.
patent: 6218732 (2001-04-01), Russell et al.
patent: 6225210 (2001-05-01), Ngo et al.
patent: 6235633 (2001-05-01), Jang
patent: 6261951 (2001-07-01), Buchwalter et al.
patent: 6265779 (2001-07-01), Grill et al.
patent: 6441491 (2002-08-01), Grill et al.
patent: 6475925 (2002-11-01), Braeckelmann et al.
patent: 6503818 (2003-01-01), Jang
patent: 6528432 (2003-03-01), Ngo et al.
patent: 6593237 (2003-07-01), Ngo et al.
patent: 20010000155 (2001-04-01), Huang et al.
patent: 20010002333 (2001-05-01), Huang et al.
patent: 20010002731 (2001-06-01), Ueda
patent: 20010003064 (2001-06-01), Ohto
patent: 20010022398 (2001-09-01), Grill et al.
patent: 20020100907 (2002-08-01), Wang
patent: 1111843 (1989-04-01), None
patent: 2001015480 (2001-01-01), None
patent: 2001053076 (2001-02-01), None
patent: WO 9933102 (1999-07-01), None
patent: WO 0019523 (2000-06-01), None
Soo Geun Lee et al., “Low Dielectric Constant 3MS a-SiC:H as Cu Diffusion Barrier Layer in Cu Dual Damascene Process,” Japanese Journal of Applied Physics, Part 1, vol. 40, No. 4B, pp. 2663-2668, Apr. 2001.
R.D. Goldblatt et al., “ A High Performance 0.13 um Copper BEOL Technology with Low-k Dielectric,” Proceedings of the IEEE 2000 International Interconnect Technology Conference, pp. 261-263, Jun. 5-7, 2000.
J. Yota et al., “Comparison Between HDP CVD and PECVD Silicon Nitride for Advanced Interconnect Applications,” Proceedings of the IEEE 2000 International Interconnect Technology Conference, pp. 76-78, Jun. 5-7, 2000.

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Bilayer HDP CVD/PE CVD cap in advance BEOL interconnect... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Bilayer HDP CVD/PE CVD cap in advance BEOL interconnect..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Bilayer HDP CVD/PE CVD cap in advance BEOL interconnect... will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-3398874

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.