Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Ball or nail head type contact – lead – or bond
Reexamination Certificate
2007-02-27
2007-02-27
Clark, Jasmine (Department: 2815)
Active solid-state devices (e.g., transistors, solid-state diode
Combined with electrical contact or lead
Ball or nail head type contact, lead, or bond
C257S779000, C257S781000, C257S784000, C257S748000, C257S750000, C257SE21088, C257SE21122
Reexamination Certificate
active
10905882
ABSTRACT:
A method for connecting a microelectronic device to a wirebond comprises providing a substrate having a microelectronic circuit therein and forming a wiring layer over the substrate. The wiring layer includes a bilayer wiring structure comprising upper and lower electrically conductive layers separated by a protective electrically conductive layer. The lower layer of the bilayer structure is at the level of the wiring layer and the upper layer of the bilayer structure extends above the level of the wiring layer. The bilayer wiring structure is formed by depositing the upper and lower electrically conductive layers separated by a protective electrically conductive layer over the substrate, etching the upper electrically conductive layer and a portion of the protective electrically conductive layer, and thereafter separately etching the lower electrically conductive layer to form the wiring layer over the substrate. The method also includes connecting a wirebond to the upper layer of the bilayer structure.
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Luce Stephen E.
McDevitt Thomas L.
Stamper Anthony K.
Clark Jasmine
DeLio & Peterson LLC
International Business Machines - Corporation
Peterson Peter W.
Sabo William D.
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