Bifurcated polysilicon gate electrodes and fabrication methods

Details Bifurcated polysilicon gate electrodes and fabrication methods Bifurcated polysilicon gate electrodes and fabrication methods

1996-04-17

1998-04-07

Thomas, Tom

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257364, 257365, 437189, 437193, H01L 29423

Patent

active

057367728

ABSTRACT:
A polysilicon gate electrode of an integrated circuit field effect transistor is formed in two portions which are isolated from one another. The first portion is formed on the gate insulating region. The second portion is formed on the semiconductor substrate outside the gate insulating region and is electrically insulated from the first portion. Since the first and second portions of the polysilicon gate electrode are isolated from one another, only the charge which is on the first polysilicon portion contributes to gate insulating region degradation during plasma etching. After polysilicon gate electrode formation, the first and second portions may be electrically connected by a link. Field effect transistor performance and/or reliability are thereby increased.

REFERENCES:
patent: 5378913 (1995-01-01), Hoeltge
patent: 5581105 (1996-12-01), Huang

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