BiCMOS write-recovery circuit

Details BiCMOS write-recovery circuit BiCMOS write-recovery circuit

1988-02-02

1990-05-15

Fears, Terrell W.

Static information storage and retrieval

Read/write circuit

Precharge

36518901, 36523001, G11C 1300

Patent

active

049263838

ABSTRACT:
A BiCMOS write-recovery method and circuit for recovering bit lines in a digital memory system provides approximately 1 nS recovery time and allows a 256K BiCMOS SRAM to achieve 10 nS access time. All bit lines in the memory system connected to a column not being read are held at a high potential, approximately equal to the upper power supply. During a write, one bit line is pulled low and its complementary bit line is clamped with a bipolar transistor to an intermediate potential, thereby preloading the complementary bit line. Following a write, the bit line that was pulled low is pulled up with a bipolar transistor to the intermediate voltage. Simultaneously, the bit line and the complementary bit line are shunted together, then returned to the high potential. Undesired bootstrap capacitance effects in the bipolar transistors are minimized by connecting a plurality of pull-up transistors in parallel, and by feeding the clamping transistors with low impedance drivers.

REFERENCES:
patent: 4078261 (1988-03-01), Millhollan et al.
patent: 4685086 (1987-08-01), Tran
patent: 4740926 (1988-04-01), Takemae et al.
patent: 4744059 (1988-05-01), Rufford
patent: 4768168 (1988-08-01), Watanabe
patent: 4791613 (1988-12-01), Hardee

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