Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Patent
1996-09-23
1999-03-23
Whitehead, Jr., Carl
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
257205, 257350, 257361, 257370, 257273, 257378, H01L 2976, H01L 2994, H01L 31062, H01L 31113
Patent
active
058863877
ABSTRACT:
Disclosed are a semiconductor integrated circuit device capable of including both a bipolar transistor and a MOS transistor while maintaining high performances of then both and a method of fabricating the device. On a p-type silicon substrate a plurality of n.sup.+ -type regions are formed below the buried collector region of a bipolar transistor and the n-type well region of a MOS transistor. A plurality of p-type regions are formed below the isolation region of the bipolar transistor and the p-type well region of the MOS transistor. An epitaxial layer is formed on the substrate including these n.sup.+ -type and p-type regions. This epitaxial layer forms element region layers having a bipolar transistor region and a MOS transistor region. The thickness of the layer of the bipolar transistor region is smaller than that of the layer of the MOS transistor region.
REFERENCES:
patent: 5331193 (1994-07-01), Mukogawa
patent: 5543653 (1996-08-01), Grubisich
Ishimaru Kazunari
Nishigohri Masahito
Fenty Jesse A.
Jr. Carl Whitehead
Kabushiki Kaisha Toshiba
LandOfFree
BiCMOS semiconductor integrated circuit device having MOS transi does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with BiCMOS semiconductor integrated circuit device having MOS transi, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and BiCMOS semiconductor integrated circuit device having MOS transi will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-2128881