Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Patent
1990-03-26
1992-12-22
Prenty, Mark V.
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
H01L 2702
Patent
active
051737604
ABSTRACT:
A method for fabricating a BiCMOS device to achieve a maximum performance through a minimum processing steps, in which the BiCMOS device comprises high integration and high performance MOS transistors, self-aligned metal contact emitter type bipolar transistors having high load driving force, high performance matching characteristics and high integration, and self-aligned polycrystalline silicon emitter type bipolar transistors having high integration and high speed characteristics in low current, thereby being used in high integration, high speed digital and precise analog system. Said method comprises a plurality of fabrication steps including ion-implantation, formation of thin film oxide layer, deposition of nitride layer, etching of oxide layer, formation of windows and others, alternately or/and sequentially in a single chip substrate.
REFERENCES:
patent: 4403395 (1983-09-01), Curran
patent: 4475279 (1984-10-01), Gable
patent: 4484388 (1984-11-01), Iwasaki
patent: 4637125 (1987-01-01), Iwasaki et al.
patent: 4760033 (1988-07-01), Mueller
IBM Technical Disclosure Bulletin, vol. 28 #9, pp. 3813-3815 Feb. 1986.
Cho Uk-Rae
Choi Suk-Gi
Kahng Chang-Won
Min Sung-Ki
Youn Jong-mil
Bushnell Robert E.
Prenty Mark V.
Samsung Electronics Co,. Ltd.
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