Biasing structure for accessing semiconductor memory cell...

Details Biasing structure for accessing semiconductor memory cell... Biasing structure for accessing semiconductor memory cell...

2008-01-22

2008-01-22

Elms, Richard (Department: 2824)

Static information storage and retrieval

Read/write circuit

Including reference or bias voltage generator

C365S189050, C365S049130

Reexamination Certificate

active

11063651

ABSTRACT:
A biasing structure for a memory cell storage element, for setting an operating voltage at an accession electrode of the memory cell storage element. The biasing structure includes a biasing transistor coupled to the accession electrode and adapted to set the operating voltage based on a biasing voltage received at a control electrode of the biasing transistor, and a biasing voltage generator for generating the biasing voltage. The biasing voltage generator includes a feedback voltage regulation structure adapted track changes in a threshold voltage of the biasing transistor, so as to keep the operating voltage at the accession electrode of the memory cell storage element substantially stable against operating condition changes.

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European Search Report for EP 04 29 0446 dated Sep. 14, 2004.

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