Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Reexamination Certificate
2007-02-13
2007-02-13
Hoang, Quoc (Department: 2818)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
C438S306000, C257S206000, C257SE21618, C257SE21633
Reexamination Certificate
active
10790939
ABSTRACT:
Methods of fabricating halo regions are provided. In one aspect, a method is provided of fabricating a first halo region and a second halo region for a circuit device of a first conductivity type and having a gate structure with first and second sidewalls. The first halo region of a second conductivity type is formed by implanting the substrate with impurities in a first direction toward the first sidewall of the gate structure. The second halo region of the second conductivity type is formed by implanting the substrate with impurities in a second direction toward the second sidewall of the gate structure. The first and second halo regions are formed without implanting impurities in a direction substantially perpendicular to the first and second directions.
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Fuselier Mark
Qi Wen-Jie
Sultan Akif
Wu David
Hoang Quoc
Honeycutt Timothy M.
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