Bi-layer silicon film and method of fabrication

Details Bi-layer silicon film and method of fabrication Bi-layer silicon film and method of fabrication

2006-01-31

2006-01-31

Eckert, George (Department: 2815)

Semiconductor device manufacturing: process

Formation of semiconductive active region on any substrate

Polycrystalline semiconductor

C438S684000, C438S764000, C438S969000

Reexamination Certificate

active

06991999

ABSTRACT:
A bi-layer silicon electrode and its method of fabrication is described. The electrode of the present invention comprises a lower polysilicon film having a random grain microstructure, and an upper polysilicon film having a columnar grain microstructure.

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