Bi-directional transistor and method therefor

Details Bi-directional transistor and method therefor Bi-directional transistor and method therefor

2007-11-20

2007-11-20

Geyer, Scott B. (Department: 2812)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C257SE21135

Reexamination Certificate

active

11093381

ABSTRACT:
In one embodiment, a transistor is formed to conduct current in both directions through the transistor.

REFERENCES:
patent: 4847522 (1989-07-01), Fuller et al.
patent: 6084264 (2000-07-01), Darwish
patent: 6351009 (2002-02-01), Kocon et al.
patent: 6573562 (2003-06-01), Parthasarathy et al.
patent: 6624469 (2003-09-01), Harada
patent: 6661277 (2003-12-01), Dabral
patent: 6674305 (2004-01-01), Sheng et al.
patent: 6777745 (2004-08-01), Hshieh et al.
patent: 6916712 (2005-07-01), Kocon et al.
patent: 6943408 (2005-09-01), Wu et al.
Data Sheet “NTLTD7900ZR2 Power MOSFET 9A, 20 V, Logic Level, N-Channel Micro-8 Leadless”, Semiconductor Components Industries, LLC, Aug. 2004—Rev. 4, pp. 1-7.

Affiliated with

Also associated with

Rating

Bi-directional transistor and method therefor does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Bi-directional transistor and method therefor, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Bi-directional transistor and method therefor will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3887500