Bi-directional resistive random access memory capable of...

Static information storage and retrieval – Systems using particular element – Resistive

Reexamination Certificate

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

C365S158000, C365S163000, C365S171000, C365S173000, C365S175000, C365S230060

Reexamination Certificate

active

07869256

ABSTRACT:
A non-volatile memory device is employed in which data values are determined by the polarities at both ends of a cell, The non-volatile memory device includes a first decoder which decodes a plurality of predetermined bit values of a row address into a first address and is disposed in a row direction of a memory cell array; a second decoder which decodes the other bit values of the row address into a second address and is disposed in a column direction of the memory cell array; and a driver which applies bias voltages to a word line which corresponds to the first address or the second address in accordance with the data values. By including first and second decoders and decoding a row address in two steps, a bi-directional RRAM according to the present invention can perform addressing at high speeds while reducing chip size.

REFERENCES:
patent: 5282175 (1994-01-01), Fujita et al.
patent: 5886942 (1999-03-01), Akita
patent: 5896340 (1999-04-01), Wong et al.
patent: 5978263 (1999-11-01), Javanifard et al.
patent: 6128244 (2000-10-01), Thompson et al.
patent: 6141269 (2000-10-01), Shiomi et al.
patent: 6314037 (2001-11-01), Shiomi et al.
patent: 6418075 (2002-07-01), Shimano et al.
patent: 6665229 (2003-12-01), Lee et al.
patent: 7099191 (2006-08-01), Umezawa
patent: 7580276 (2009-08-01), Sawa et al.
patent: 2007/0273030 (2007-11-01), Yi et al.
patent: 2005222647 (2005-08-01), None
patent: 2006099882 (2006-04-01), None
patent: 2006203098 (2006-08-01), None

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Bi-directional resistive random access memory capable of... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Bi-directional resistive random access memory capable of..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Bi-directional resistive random access memory capable of... will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-2732313

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.