Bi-directional resistive random access memory capable of...

Details Bi-directional resistive random access memory capable of... Bi-directional resistive random access memory capable of...

2011-01-11

2011-01-11

Phan, Trong (Department: 2827)

Static information storage and retrieval

Systems using particular element

Resistive

C365S158000, C365S163000, C365S171000, C365S173000, C365S175000, C365S230060

Reexamination Certificate

active

07869256

ABSTRACT:
A non-volatile memory device is employed in which data values are determined by the polarities at both ends of a cell, The non-volatile memory device includes a first decoder which decodes a plurality of predetermined bit values of a row address into a first address and is disposed in a row direction of a memory cell array; a second decoder which decodes the other bit values of the row address into a second address and is disposed in a column direction of the memory cell array; and a driver which applies bias voltages to a word line which corresponds to the first address or the second address in accordance with the data values. By including first and second decoders and decoding a row address in two steps, a bi-directional RRAM according to the present invention can perform addressing at high speeds while reducing chip size.

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