Bi-directional read/program non-volatile floating gate...

Details Bi-directional read/program non-volatile floating gate... Bi-directional read/program non-volatile floating gate...

2006-12-19

2006-12-19

Huynh, Andy (Department: 2818)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S211000, C438S257000, C257SE21680, C257SE21422, C257SE29129

Reexamination Certificate

active

07151021

ABSTRACT:
A bi-directional read/program non-volatile memory cell and array is capable of achieving high density. Each memory cell has two spaced floating gates for storage of charges thereon. The cell has spaced apart source/drain regions with a channel therebetween, with the channel having three portions. One of the floating gate is over a first portion; another floating gate is over a second portion, and a gate electrode controls the conduction of the channel in the third portion between the first and second portions. A control gate is connected to each of the source/drain regions, and is also capacitively coupled to the floating gate. The cell programs by hot channel electron injection, and erases by Fowler-Nordheim tunneling of electrons from the floating gate to the gate electrode. Bi-directional read permits the cell to be programmed to store bits, with one bit in each floating gate.

REFERENCES:
patent: 6151248 (2000-11-01), Harari et al.
patent: 6329685 (2001-12-01), Lee
patent: 6593177 (2003-07-01), Lee

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