Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Of specified configuration
Reexamination Certificate
2005-04-13
2008-08-19
Chambliss, Alonzo (Department: 2814)
Active solid-state devices (e.g., transistors, solid-state diode
Combined with electrical contact or lead
Of specified configuration
C257S781000, C257S786000, C257SE23020, C361S767000, C361S777000, C361S808000
Reexamination Certificate
active
07414317
ABSTRACT:
In the BGA package and its manufacturing method, a bonding pad is etched from the exposed surface to a part of the insulation layer-coated region so as to form a solder contact side having a dish configuration, which is planar at a bottom center and slanted at a periphery. With this bent structure of the dish configuration, the bonding pad provides an increased bonding area for the solder, so that the BGA package substrate is enhanced in reliability.
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Lee Hyo Soo
Lee Tae Gon
Park Sung Eun
Chambliss Alonzo
Darby & Darby
Samsung Electro-Mechanics Co. Ltd.
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