BGA package having half-etched bonding pad and cut plating...

Details BGA package having half-etched bonding pad and cut plating... BGA package having half-etched bonding pad and cut plating...

2008-12-04

2010-11-09

Toledo, Fernando L (Department: 2895)

Active solid-state devices (e.g., transistors, solid-state diode

Lead frame

C257S673000, C257SE23031, C257SE21506, C257SE23023, C257SE21536, C438S612000, C438S613000, C438S614000, C438S615000, C438S616000, C438S617000, C438S123000, C438S686000, C438S584000, C438S597000

Reexamination Certificate

active

07829985

ABSTRACT:
A ball grid array (BGA) package having a half-etched bonding pad and a cut plating line and a method of fabricating the same. In the BGA package, the plating line is cut to form a predetermined uneven bonding pad using half-etching, thereby increasing the contact area between the bonding pad and a solder ball. The BGA package includes a first external layer having a first circuit pattern and a wire bonding pad pattern wherein a chip is connected to a wire bonding pad using wire bonding. A second external layer includes a second circuit pattern, a cut plating line pattern, and a half-etched uneven solder ball pad pattern. In the second external layer, another chip is mounted on a solder ball pad. An insulating layer having a through hole interposed between the first and second external layers and electrically connects the first and second external layers therethrough.

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