Computer-aided design and analysis of circuits and semiconductor – Nanotechnology related integrated circuit design
Reexamination Certificate
2005-03-22
2005-03-22
Smith, Matthew (Department: 2825)
Computer-aided design and analysis of circuits and semiconductor
Nanotechnology related integrated circuit design
C716S030000, C716S030000
Reexamination Certificate
active
06871333
ABSTRACT:
A method of characterizing a total width and an overall effective length for a bent gate. The bent gate is divided into logical portions, and each of the logical portions is designated as one of a bent portion, a corner portion, and a straight portion. A corner portion gate width and a corner portion effective length are computed for each of the logical portions designated as a corner portion. Similarly, a bent portion gate width and a bent portion effective length are computed for each of the logical portions designated as a bent portion. Likewise, a straight portion gate width and a straight portion effective length are computed for each of the logical portions designated as a straight portion. The total width of the bent gate is computed from the corner portion gate width, the bent portion gate width, and the straight portion gate width. Similarly, the overall effective length of the bent gate is computed from the corner portion effective length, the bent portion effective length, and the straight portion effective length.
REFERENCES:
patent: 6166560 (2000-12-01), Ogura et al.
patent: 6204542 (2001-03-01), Kinoshita et al.
patent: 6249900 (2001-06-01), Kotani et al.
patent: 6713793 (2004-03-01), Suzuki et al.
patent: 20030226128 (2003-12-01), Arai et al.
Davis Robert W.
Park SangJune
LSI Logic Corporation
Luedeka Neely & Graham P.C.
Smith Matthew
Tat Binh
LandOfFree
Bent gate transistor modeling does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Bent gate transistor modeling, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Bent gate transistor modeling will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3438284