Benign method for etching silicon dioxide

Details Benign method for etching silicon dioxide Benign method for etching silicon dioxide

1998-04-08

2000-04-11

Bueker, Richard

Cleaning and liquid contact with solids

Processes

For metallic, siliceous, or calcareous basework, including...

134 3, 216 96, 216 99, 252 793, C23F 100

Patent

active

060484063

ABSTRACT:
Traditionally, hydrofluoric acid (HF) or buffered bydrofluoric acid (NH.sub.4 F) is mixed with water to form a etching solution for cleaning silicon dioxide from semiconductor wafer surfaces. An etching solution formed by mixing ammonium hydrogen bifluoride ((NH.sub.4)HF.sub.2) with water provides a benign alternative for cleaning silicon dioxide.

REFERENCES:
patent: 3607480 (1971-09-01), Harrap et al.
patent: 3629667 (1971-12-01), Lubart et al.
patent: 5268069 (1993-12-01), Chappel-Sokol et al.
patent: 5571447 (1996-11-01), Ward et al.

Affiliated with

Also associated with

Rating

Benign method for etching silicon dioxide does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Benign method for etching silicon dioxide, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Benign method for etching silicon dioxide will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1173768