Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – On insulating substrate or layer
Reexamination Certificate
2008-11-07
2010-11-30
Booth, Richard A. (Department: 2812)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
On insulating substrate or layer
C257SE21561
Reexamination Certificate
active
07842565
ABSTRACT:
The present invention provides a beam homogenizer for homogenizing energy distribution by making the distance between lenses small to shorten the optical path length with the use of an array lens of an optical path shortened type, and a laser irradiation apparatus using the beam homogenizer. The beam homogenizer is equipped with a front side array lens of an optical path shortened type whose second principal point is positioned ahead on a beam incidence side, a back side array lens of an optical path shortened type whose first principal point is positioned behind on a beam emission side, and a condensing lens, wherein the distance between the second principal point of the front side array lens and the first principal point of the back side array lens is equal to the focal length of the back side array lens.
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Search Report (Application No. 06006435.9) dated Aug. 17, 2006.
Office Action (Application No. 06006435.9) dated Aug. 25, 2008.
Booth Richard A.
Robinson Eric J.
Robinson Intellectual Property Law Office P.C.
Semiconductor Energy Laboratory Co,. Ltd.
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