Barrierless high-temperature lift-off process

Details Barrierless high-temperature lift-off process Barrierless high-temperature lift-off process

1985-04-30

1986-08-19

Kittle, John E.

Radiation imagery chemistry: process, composition, or product th

Imaging affecting physical property of radiation sensitive...

Making electrical device

430313, 430314, 430315, 430316, 430317, 430323, 430324, 430326, 430327, 430329, 430330, 430328, 156650, 156652, 1566591, H01L 2128

Patent

active

046069984

ABSTRACT:
A lift-off metal deposition process in which a high temperature polyimide layer (i.e. a polyimide having a high imidization temperature) is applied to a first polyimide layer. The two layers are anisotropically etched through a photoresist mask to form vias in the first polyimide layer. After application of a metal layer, the high-temperature polyimide layer is lifted off the first polyimide layer, which remains as a passivation layer.

REFERENCES:
patent: 4334349 (1982-06-01), Aoyama et al.
patent: 4353778 (1982-10-01), Fineman et al.
patent: 4377115 (1982-06-01), Ikeda et al.
patent: 4428796 (1984-01-01), Milgram
patent: 4451971 (1984-06-01), Milgram
patent: 4523976 (1985-06-01), Bukhman
A Negative Resist Process for Polyimide as Dielectric in Dual Layer Metal Structure Belani and Spoack, Natl. Semiconductor.
Polyimide Liftoff Technology for High Density LSI Metallization Homma et al.
Doublecoat Planar Polyimide Process, vol. 27, No. 2, Jul. 1984 IBM Technical Disclosure Bulletin.

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