Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Reexamination Certificate
2001-06-30
2003-11-04
Smith, Matthew (Department: 2825)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
C438S396000, C438S095000, C438S470000, C438S128000, C257S003000, C257S530000, C257S621000
Reexamination Certificate
active
06642102
ABSTRACT:
BACKGROUND
1. Field
The invention relates generally to programmable devices.
2. Background
Typical memory applications include dynamic random access memory (DRAM), static random access memory (SRAM), erasable programmable read only memory (EPROM), and electrically erasable programmable read only memory (EEPROM).
Solid state memory devices typically employ micro-electronic circuit elements for each memory bit (e.g., one to four transistors per bit) in memory applications. Since one or more electronic circuit elements are required for each memory bit, these devices may consume considerable chip “real estate” to store a bit of information, which limits the density of a memory chip. The primary “non-volatile” memory element of these devices, such as an EEPROM, typically employ a floating gate field effect transistor device that has limited re-programmability and which holds a charge on the gate of field effect transistor to store each memory bit. These classes of memory devices are also relatively slow to program.
Phase change memory devices use phase change materials, i.e., materials that can be electrically switched between a generally amorphous and a generally crystalline state, for electronic memory application. One type of memory element originally developed by Energy Conversion Devices, Inc. of Troy, Mich. utilizes a phase change material that can be, in one application, electrically switched between a structural state of generally amorphous and generally crystalline local order or between different detectable states of local order across the entire spectrum between completely amorphous and completely crystalline states. Typical materials suitable for such application include those utilizing various chalcogenide elements. These electrical memory devices typically do not use field effect transistor devices, but comprise, in the electrical context, a monolithic body of thin film chalcogenide material. As a result, very little chip real estate is required to store a bit of information, thereby providing for inherently high density memory chips. The state change materials are also truly non-volatile in that, when set in either a crystalline, semi-crystalline, amorphous, or semi-amorphous state representing a resistance value, that value is retained until reset as that value represents a physical state of the material (e.g., crystalline or amorphous). Thus, phase change memory materials represent a significant improvement in non-volatile memory.
One way to form phase change programmable devices such as phase change memory devices is in the form of a stack of programmable material between signal lines (e.g., row and column lines), possibly with an electrode and an isolation device between a signal line and the programmable material. Effective isolation of individual programmable elements (e.g., individual programmable memory elements) is important to improve the performance of a multi-device structure. Thus, what is needed are improved isolation techniques and an apparatus (device structure) with improved device isolation.
REFERENCES:
patent: 4597162 (1986-07-01), Johnson et al.
patent: 5296716 (1994-03-01), Ovshinsky et al.
patent: 5335219 (1994-08-01), Ovshinsky et al.
patent: 5596522 (1997-01-01), Ovshinsky et al.
patent: 5751012 (1998-05-01), Wolstenholme et al.
patent: 5789758 (1998-08-01), Reinberg
patent: 5879955 (1999-03-01), Gonzalez et al.
patent: 5920788 (1999-07-01), Reinberg
patent: 5933365 (1999-08-01), Klersy et al.
patent: 5970336 (1999-10-01), Wolstenhome et al.
patent: 5998244 (1999-12-01), Wolstenholme et al.
patent: 6002140 (1999-12-01), Gonzalez et al.
patent: 6031287 (2000-02-01), Harshfield
patent: 6087674 (2000-07-01), Ovshinsky et al.
patent: 6114713 (2000-09-01), Zahorik
patent: 6153890 (2000-11-01), Wolstenholme et al.
patent: 6229157 (2001-05-01), Sandhu
patent: 6287919 (2001-09-01), Zahorik
patent: 6337266 (2002-01-01), Zahorik
patent: 6429449 (2002-08-01), Gomzalez et al.
Intel Corporation
Martinez Anthony M.
Smith Matthew
Yevsikov V.
LandOfFree
Barrier material encapsulation of programmable material does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Barrier material encapsulation of programmable material, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Barrier material encapsulation of programmable material will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3144479