Barrier/liner with a SiNx-enriched surface layer on MOCVD prepar

Details Barrier/liner with a SiNx-enriched surface layer on MOCVD prepar Barrier/liner with a SiNx-enriched surface layer on MOCVD prepar

1998-03-04

2000-03-14

King, Roy V.

Coating processes

Direct application of electrical, magnetic, wave, or...

Pretreatment of substrate or post-treatment of coated substrate

427255394, 4272554, 4273977, 4272557, 438653, 438672, 438681, B05D 306, C23C 1630

Patent

active

060370130

ABSTRACT:
A barrier/liner structure (10) and method. First, a porous nitride layer (12) is formed over a structure (18), for example, by metal-organic CVD (MOCVD). Then, the porous nitride layer (12) is exposed to a silicon- (or dopant-) containing ambient to obtain a silicon-(or dopant) rich surface layer (14). Finally, the silicon- (or dopant) rich surface layer (14) is nitrided to obtain a silicon-nitride (or dopant-nitride) enriched surface layer (16).

REFERENCES:
patent: 5591672 (1997-01-01), Lee et al.
patent: 5614437 (1997-03-01), Choundhury
patent: 5705442 (1998-01-01), Yen et al.

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