Barrier layer stack to prevent Ti diffusion

Details Barrier layer stack to prevent Ti diffusion Barrier layer stack to prevent Ti diffusion

2006-06-20

2006-06-20

Coleman, W. David (Department: 2823)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

Reexamination Certificate

active

07064056

ABSTRACT:
An improved barrier layer stack and method for forming the same for preserving an aluminum alloy interconnect resistivity, the method comprising providing a semiconductor process wafer comprising an exposed conductive region; forming a first barrier layer comprising a barrier layer stack over the exposed conductive region comprising one of a TiN or Ti layer in contact with the conductive region; forming at least one additional barrier layer comprising the barrier layer stack to form an alternating sequence of TiN and Ti layers; forming an uppermost barrier layer of TiN comprising the barrier layer stack; forming an overlying aluminum alloy region in contact with the uppermost barrier layer; and, subjecting the semiconductor process wafer to at least one process comprising a temperature of greater than temperatures greater than about 350° C.

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