Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Reexamination Certificate
2007-09-18
2007-09-18
Whitehead, Jr., Carl (Department: 2813)
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
C438S639000
Reexamination Certificate
active
10932156
ABSTRACT:
A barrier layer forming method includes providing a porous dielectric layer over a substrate, the dielectric layer having a surface with exposed pores, and treating the dielectric layer with a plasma formed from a methane-containing gas. The treating seals the exposed pores. The method includes depositing a barrier layer over the surface, the barrier layer being continuous over the sealed pores. The porous dielectric may be low K. The plasma may be formed at a bias of at least about 100 volts.
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Howard Bradley J.
Sandu Gurtej S.
Doty Heather
Jr. Carl Whitehead
Wells St. John P.S.
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