Barrier layer decreases nitrogen contamination of peripheral gat

Details Barrier layer decreases nitrogen contamination of peripheral gat Barrier layer decreases nitrogen contamination of peripheral gat

1999-03-31

2000-11-07

Quach, T. N.

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

438287, 438770, 438786, 438791, H01L 21336

Patent

active

061436089

ABSTRACT:
This invention describes methods for producing gate oxide regions in periphery regions of semiconductor chips, wherein the gate oxide regions have improved electrical properties. The methods involve the deposition of a barrier layer over the periphery of the semiconductor chip to prevent the introduction of contaminating nitrogen atoms into the periphery during a nitridation step in the core region of the semiconductor chip. By preventing the contamination of the gate areas of the periphery, the gate oxide regions so produced have increased breakdown voltages and increased reliability. This invention describes methods for etching the barrier layers used to protect the periphery from tunnel oxide nitridation. Semiconductor devices made with the methods of this invention have longer expected lifetimes and can be manufactured with higher device density.

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patent: 5506159 (1996-04-01), Enomoto
patent: 5541129 (1996-07-01), Tsunoda
patent: 5553017 (1996-09-01), Ghezzi et al.
patent: 5792696 (1998-08-01), Kim et al.
patent: 5889305 (1999-03-01), Choi et al.
patent: 6025228 (2000-02-01), Ibok et al.

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