Barrier layer and method of depositing a barrier layer

Details Barrier layer and method of depositing a barrier layer Barrier layer and method of depositing a barrier layer

2005-03-01

2005-03-01

Versteeg, Steven (Department: 1753)

Chemistry: electrical and wave energy

Processes and products

Coating, forming or etching by sputtering

C204S192220

Reexamination Certificate

active

06860975

ABSTRACT:
A barrier layer is deposited on a substrate having a recess by sputtering tantalum in a nitrogen atmosphere. A flow of the nitrogen is selected to deposit mixed phase bcc/βTa, and sputter ions are sufficiently energetic to cause re-sputtering of deposited material from the base of the recess to its sidewall or sidewalls.

REFERENCES:
patent: 6139699 (2000-10-01), Chiang et al.
patent: 6140231 (2000-10-01), Lin et al.
patent: 6229211 (2001-05-01), Kawanoue et al.
patent: 0 875 924 (2002-04-01), None
patent: WO 9953114 (1999-10-01), None
patent: WO 03072846 (2003-09-01), None
S.R. Burgess et al., “Evaluation of Ta and TaN-based Cu diffusion barriers deposited by Advanced Hi-Fill (AHF) sputtering onto blanket wafers and high aspect ratio structures”, Microelectronic Engineering, 2002 Elsevier Science B.V., pp. 307-313.
Momtchil Stavrev et al., “Crystallographic and morphological characterization of reactively sputtered Ta, Ta-N and Ta-N-O thin films”, Thin Sold Films, 1997 Elsevier Science S.A., pp. 79-88.
Bhola Mehrotra et al.“Properties of direct current magnetron reactively sputtered TaN”, Jornal of Vacuum Science & Technology/Section B 5, (1987)Nov./Dec., No. 6, pp. 1736-1740.
A.Z. Moshfegh et al., “Bias sputtered Ta modified diffusion barrier in Cu/Ta (Vb)/Si(111) structures”, Thin Solid Films, 2000 Elsevier Science S.A., pp. 10-17.
Philip Cantanla et al., “Low resistivity body-centered cubic tantalum thin films as diffusion barriers between copper and silicon”, Journal of Vacuum Science & Tehnology A 10 (1992) Sep./Oct., No. 5, New York, pp. 3318-3321.
Kyung-Hoon Min et al., “Comparative study of tantalum and tantalum nitrides (Ta2N and TaN) as diffusion barrier for Cu metallization”,J. Vac. Sci. Technol. b14(5), Sep./Oct. 1996, pp. 3263-3269.

Affiliated with

Also associated with

Rating

Barrier layer and method of depositing a barrier layer does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Barrier layer and method of depositing a barrier layer, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Barrier layer and method of depositing a barrier layer will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3404152