Barrier layer and fabrication method thereof

Details Barrier layer and fabrication method thereof Barrier layer and fabrication method thereof

2007-02-20

2007-02-20

Everhart, Caridad (Department: 2891)

Semiconductor device manufacturing: process

Coating of substrate containing semiconductor region or of...

Insulative material deposited upon semiconductive substrate

C257SE21584, C438S643000

Reexamination Certificate

active

10955519

ABSTRACT:
A barrier layer and a fabrication thereof are disclosed. The barrier layer comprises at least one barrier material selected from the group consisting of Ta, W, Ti, Ru, Zr, Hf, V, Nb, Cr and Mo and at least one component of oxygen, nitrogen or carbon. A ratio of the component to the barrier material is not less than about 0.45. The fabrication method of the barrier layer applies a working pressure for forming the barrier layer from about 0.5 mTorr to about 200 mTorr substantially without forming crystalline material therein.

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