Barrier free copper interconnect by multi-layer copper seed

Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material

Reexamination Certificate

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C438S637000, C438S692000

Reexamination Certificate

active

06943111

ABSTRACT:
A new method is provided for the creation of a copper seed interface capability. A first seed layer of copper alloy and a second seed layer of copper is provided over an opening in a layer of dielectric. The opening is filled with copper, the first and second seed layers are annealed.

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