Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Reexamination Certificate
2005-09-13
2005-09-13
Nguyen, Ha Tran (Department: 2812)
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
C438S637000, C438S692000
Reexamination Certificate
active
06943111
ABSTRACT:
A new method is provided for the creation of a copper seed interface capability. A first seed layer of copper alloy and a second seed layer of copper is provided over an opening in a layer of dielectric. The opening is filled with copper, the first and second seed layers are annealed.
REFERENCES:
patent: 5130274 (1992-07-01), Harper et al.
patent: 5789320 (1998-08-01), Andricacos et al.
patent: 5913144 (1999-06-01), Nguyen et al.
patent: 5968847 (1999-10-01), Ye et al.
patent: 5969422 (1999-10-01), Ting et al.
patent: 6015749 (2000-01-01), Liu et al.
patent: 6043148 (2000-03-01), Peng et al.
patent: 6090710 (2000-07-01), Andricacos et al.
patent: 6124198 (2000-09-01), Moslehi
patent: 6130156 (2000-10-01), Havemann et al.
patent: 6181012 (2001-01-01), Edelstein et al.
patent: 6218734 (2001-04-01), Charneski et al.
patent: 6228759 (2001-05-01), Wang et al.
patent: 6287977 (2001-09-01), Hashim et al.
patent: 6291334 (2001-09-01), Somekh
patent: 6309970 (2001-10-01), Ito et al.
patent: 6333560 (2001-12-01), Uzoh
patent: 6358848 (2002-03-01), Lopatin
patent: 6365502 (2002-04-01), Paranjpe et al.
patent: 6365506 (2002-04-01), Chang et al.
patent: 6387805 (2002-05-01), Ding et al.
patent: 6498093 (2002-12-01), Achuthan et al.
patent: 6518177 (2003-02-01), Kawanoue et al.
patent: 6518668 (2003-02-01), Cohen
patent: 6576555 (2003-06-01), Tseng
Huang Cheng-Lin
Liang Mong-Song
Lin Jing-Cheng
Shue Winston
Haynes and Boone LLP
Nguyen Ha Tran
Taiwan Semiconductor Manufacturing Company , Ltd.
LandOfFree
Barrier free copper interconnect by multi-layer copper seed does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Barrier free copper interconnect by multi-layer copper seed, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Barrier free copper interconnect by multi-layer copper seed will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3412128