Barrier for interconnect and method

Details Barrier for interconnect and method Barrier for interconnect and method

2006-01-31

2006-01-31

Lebentritt, Michael (Department: 2812)

Active solid-state devices (e.g., transistors, solid-state diode

Combined with electrical contact or lead

Of specified material other than unalloyed aluminum

C257S751000, C257S753000, C257S766000, C257S767000, C257S762000, C257SE23021, C257SE21508, C257SE21586

Reexamination Certificate

active

06992389

ABSTRACT:
A method of creating a multi-layered barrier for use in an interconnect, a barrier for an interconnect, and an interconnect including the barrier are disclosed. The method includes creating the multi-layered barrier in a recess of the device terminal by use of a single electroplating chemistry to enhance protection against voiding and de-lamination due to the diffusion of copper, whether by self-diffusion or electro-migration. The barrier includes at least a first layer of nickel-rich material and a second layer of copper-rich material. The barrier enables use of higher current densities for advanced complementary metal-oxide semiconductors (CMOS) designs, and extends the reliability of current CMOS designs regardless of solder selection. Moreover, this technology is easily adapted to current methods of fabricating electroplated interconnects such as C4s.

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Zhang et al., “tribological properties of nickel-copper multilayer film on beryllium bronze substrate”, Thin Solid Films vol. 305, 1997, pp. 292-296.
“Microstructure/Mechanical Properties Relationship in Electrodeposited Ni/Cu Nanolaminates,” F. Ebrahimi et al., Materials Science and Engineering A301 (2001) pp. 23-34.

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