Barrier first method for single damascene trench applications

Details Barrier first method for single damascene trench applications Barrier first method for single damascene trench applications

2007-03-06

2007-03-06

Lebentritt, Michael (Department: 2812)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C257SE23010

Reexamination Certificate

active

10804353

ABSTRACT:
Methods for forming a diffusion barrier on low aspect features of an integrated circuit include at least three operations. The first operation deposits a barrier material and simultaneously etches a portion of an underlying metal at the bottoms of recessed features of the integrated circuit. The second operation deposits barrier material to provide some minimal coverage over the bottoms of the recessed features. The third operation deposits a metal conductive layer. Controlled etching is used to selectively remove barrier material from the bottom of the recessed features, either completely or partially, thus reducing the resistance of subsequently formed metal interconnects.

REFERENCES:
patent: 5221449 (1993-06-01), Colgan et al.
patent: 5281485 (1994-01-01), Colgan et al.
patent: 5482611 (1996-01-01), Helmer et al.
patent: 5904565 (1999-05-01), Nguyen et al.
patent: 5985762 (1999-11-01), Geffken et al.
patent: 6074544 (2000-06-01), Reid et al.
patent: 6080285 (2000-06-01), Liu et al.
patent: 6099702 (2000-08-01), Reid et al.
patent: 6110346 (2000-08-01), Reid et al.
patent: 6124203 (2000-09-01), Joo et al.
patent: 6126798 (2000-10-01), Reid et al.
patent: 6139712 (2000-10-01), Patton et al.
patent: 6156167 (2000-12-01), Patton et al.
patent: 6159354 (2000-12-01), Contolini et al.
patent: 6162344 (2000-12-01), Reid et al.
patent: 6179973 (2001-01-01), Lai et al.
patent: 6179983 (2001-01-01), Reid et al.
patent: 6193854 (2001-02-01), Lai et al.
patent: 6217716 (2001-04-01), Fai Lai
patent: 6221757 (2001-04-01), Schmidbauer et al.
patent: 6228754 (2001-05-01), Iacoponi et al.
patent: 6251242 (2001-06-01), Fu et al.
patent: 6274008 (2001-08-01), Gopalraja et al.
patent: 6277249 (2001-08-01), Gopalraja et al.
patent: 6287977 (2001-09-01), Hashim et al.
patent: 6350353 (2002-02-01), Gopalraja et al.
patent: 6417094 (2002-07-01), Zhao et al.
patent: 6492262 (2002-12-01), Uzoh
patent: 6541374 (2003-04-01), De Felipe et al.
patent: 6566246 (2003-05-01), De Felipe et al.
patent: 6607977 (2003-08-01), Rozbicki et al.
patent: 6919275 (2005-07-01), Chiang et al.
patent: 6949457 (2005-09-01), Fiordalice et al.
patent: 7030031 (2006-04-01), Wille et al.

Affiliated with

Also associated with

Rating

Barrier first method for single damascene trench applications does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Barrier first method for single damascene trench applications, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Barrier first method for single damascene trench applications will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3743806