BARC/resist via etchback process

Details BARC/resist via etchback process BARC/resist via etchback process

2007-06-19

2007-06-19

Deo, Duy-Vu N. (Department: 1765)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C438S622000, C438S624000, C438S636000, C438S637000

Reexamination Certificate

active

10897864

ABSTRACT:
A BARC or other sacrificial fill layer etch comprises a selective etch chemistry of Ar/O2/CO. The BARC etch may be used in a via-first dual damascene method. After via (116) pattern and etch, a BARC/sacrificial fill layer (120) is deposited to fill the via (116) and coat the IMD (110). The excess sacrificial fill layer (120) material over the IMD (110) is removed using the Ar/O2/CO etch. A trench resist pattern (125) is formed over the BARC layer (120). During the main trench etch, portions of sacrificial fill layer (120) remain in the via to protect the etch-stop (104) at the bottom of the via (116).

REFERENCES:
patent: 6448177 (2002-09-01), Morrow et al.
patent: 6781216 (2004-08-01), Nakamura
patent: 6861347 (2005-03-01), Lee et al.
patent: 2002/0173143 (2002-11-01), Lee et al.
patent: 2003/0001273 (2003-01-01), Steiner et al.
patent: 2004/0127016 (2004-07-01), Hoog et al.
patent: 2004/0137711 (2004-07-01), Deguchi

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