Backside metallization scheme for semiconductor devices

Details Backside metallization scheme for semiconductor devices Backside metallization scheme for semiconductor devices

1989-04-06

1990-08-07

Roy, Upendra

Stock material or miscellaneous articles

All metal or with adjacent metals

Composite; i.e., plural, adjacent, spatially distinct metal...

357 70, 357 71, 357 81, 357 82, 428662, 437 10, 437 12, H01L 2348, H01L 2158

Patent

active

049463764

ABSTRACT:
A backside metalization scheme for semiconductor devices includes a vanadium layer disposed on the backside of a wafer and a silver layer disposed on the vanadium layer. An optional intermediate layer comprising either a mixture of vanadium and silver or nickel may be disposed between the vanadium layer and the silver layer. The vanadium layer exhibits excellent adhesion characteristics on the backside of wafers having a finish at least as fine as a 300 grit equivalency while the silver layer exhibits excellent solderability characteristics.

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Kanoda et al. Phys. Rev. B, vol. 35 (1987) 6736.
Smith, J. F., Bull. Alloy Phase Diagrams, 2 (1981) 343.

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