Backside illuminated sensor processing

Active solid-state devices (e.g. – transistors – solid-state diode – Responsive to non-electrical signal – Electromagnetic or particle radiation

Reexamination Certificate

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Details

C257S414000, C257S431000, C257S440000, C257S447000, C257S448000

Reexamination Certificate

active

08053856

ABSTRACT:
The present disclosure provides methods and apparatus for reducing dark current in a backside illuminated semiconductor device. In one embodiment, a method of fabricating a semiconductor device includes providing a substrate having a frontside surface and a backside surface, and forming a plurality of sensor elements in the substrate, each of the plurality of sensor elements configured to receive light directed towards the backside surface. The method further includes forming a dielectric layer on the backside surface of the substrate, wherein the dielectric layer has a compressive stress to induce a tensile stress in the substrate. A backside illuminated semiconductor device fabricated by such a method is also disclosed.

REFERENCES:
patent: 6169319 (2001-01-01), Malinovich et al.
Hernan A. Rueda, “Modeling of Mechanical Stress in Silicon Isolation Technology and Its Influence on Device Characteristics”, A Dissertation Presented to the Graduate School of the University of Florida in Partial Fulfillment of the Requirements for the Degree of Doctor of Philosophy, University of Florida, 1999, 150 pages.

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